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Agilent HCPL-354 AC Input Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Features * AC input response * Current transfer ratio (CTR: min. 20% at IF = 1 mA, VCE = 5 V) * Isolation voltage between input and output (Viso = 3,750 Vrms) * Subminiature type (The volume is smaller than that of conventional DIP type by as far as 30%) * Mini-flat package * 2.0 mm profile * UL approved * CSA approved * IEC/EN/DIN EN 60747-5-2 approved * Options available: - IEC/EN/DIN EN 60747-5-2 approvals (060) Applications * Detecting or monitoring AC signals * Programmable controllers * AC/DC-input modules * AC line/digital logic isolation Description The HCPL-354 contains a phototransistor, optically coupled to two light emitting diodes connected inverse parallel. It can operate directly by AC input current. It is packaged in a 4-pin mini-flat SMD package with a 2.0 mm profile. The small dimension of this product allows significant space saving. The package volume is 30% smaller than that of conventional DIP type. Inputoutput isolation voltage is 3750 Vrms. Response time, tr, is typically 4 s and minimum CTR is 20% at input current of 1 mA. Ordering Information Specify Part Number followed by Option Number (if desired). HCPL-354-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option 00A = Rank Mark A Functional Diagram 1 4 2 3 1. ANODE, CATHODE 2. CATHODE, ANODE 3. EMITTER 4. COLLECTOR CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawing HCPL-354-000E 2.54 0.25 3.60 0.3 5.30 0.3 354 Y WW LEAD FREE DATE CODE *1 4.40 0.2 2.00 0.2 0.2 0.05 0.40 0.1 RANK *2 0.10 0.1 + 0.2 7.00 - 0.7 DIMENSIONS IN MILLIMETERS. HCPL-354-060E 2.54 0.25 3.60 0.3 5.30 0.3 354 V Y WW LEAD FREE DATE CODE *1 4.40 0.2 2.00 0.2 0.2 0.05 0.40 0.1 RANK *2 0.10 0.1 + 0.2 7.00 - 0.7 DIMENSIONS IN MILLIMETERS. Temperature (C) Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above. 30 seconds 250C 217C 200C 260C (Peak Temperature) 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) 60 sec 2 Absolute Maximum Ratings Parameters Storage Temperature Ambient Operating Temperature Lead Solder Temperature for 10s (1.6 mm below seating plane) Average Forward Current Input Power Dissipation Collector Current Collector-Emitter Voltage Emitter-Collector Voltage Collector Power Dissipation Total Power Dissipation Isolation Voltage (AC for 1 minute, R.H. = 40 ~ 60%)[1] Symbol TS TA Tsol IF PI IC VCEO VECO PC Ptot Viso Min. -55 -55 Max. 150 100 260 50 70 50 35 6 150 170 3750 Units C C C mA mW mA V V mW mW Vrms Electrical Specifications (TA = 25C) Parameter Forward Voltage Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current Current Transfer Ratio[2] Collector-Emitter Saturation Voltage Isolation Resistance Floating Capacitance Response Time (Rise) Response Time (Fall) Rank Mark A No Mark CTR (%) 50 ~ 150 20 ~ 400 Symbol VF Ct ICEO BVCEO BVECO IC CTR VCE(sat) Riso Cf tr tf Conditions IF = 1 mA, VCE = 5 V, TA = 25C Min. - - - 35 6 0.2 20 - 5 x 1010 - - - Typ. 1.2 30 - - - - - 0.1 1 x 1011 0.6 4 3 Max. 1.4 250 100 - - 4 400 0.2 - 1 18 18 Units V pF nA V V mA % V pF s s Test Conditions IF = 20 mA V = 0, f = 1 kHz VCE = 20 V, IF = 0 IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IF = 1 mA, VCE = 5 V IF = 20 mA, IC = 1 mA DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz VCE = 2 V, IC = 2 mA, RL = 100 Notes: 1. Isolation voltage shall be measured using the following method: (a) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (b) The isolation voltage tester with zero-cross circuit shall be used. (c) The waveform of applied voltage shall be a sine wave. I 2. CTR = C x 100% IF 3 60 IF - FORWARD CURRENT - mA PC - COLLECTOR POWER DISSIPATION - mW 50 40 30 20 10 0 -55 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V 200 6 TA = 25C 5 4 3 2 1 0 0 25 50 75 100 125 IC = 0.5 mA IC = 1 mA IC = 3 mA IC = 5 mA IC = 7 mA 150 100 50 0 25 50 75 100 125 0 -55 0 2.5 5.0 7.5 10.0 12.5 15.0 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C IF - FORWARD CURRENT - mA Figure 1. Forward current vs. ambient temperature. Figure 2. Collector power dissipation vs. ambient temperature. Figure 3. Collector-emitter saturation voltage vs. forward current. CTR - CURRENT TRANSFER RATIO - % 500 IF - FORWARD CURRENT - mA 200 100 50 20 10 5 2 1 0 120 100 80 60 40 20 IC - COLLECTOR CURRENT - mA TA = 75C TA = 50C TA = 25C 140 VCE = 5 V TA = 25C 50 TA = 25C TA = 0C TA = -25C 40 IF = 30 mA 30 PC (MAX.) IF = 20 mA IF = 10 mA 20 10 IF = 5 mA IF = 1 mA 0.5 1.0 1.5 2.0 2.5 3.0 0 0.1 0.2 0.5 1 2 5 10 20 50 100 0 0 1 2 3 4 5 6 7 8 9 10 VF - FORWARD VOLTAGE - V IF - FORWARD CURRENT - mA VCE - COLLECTOR-EMITTER VOLTAGE - V Figure 4. Forward current vs. forward voltage. Figure 5. Current transfer ratio vs. forward current. Figure 6. Collector current vs. collectoremitter voltage. RELATIVE CURRENT TRANSFER RATIO - % 150 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V 0.10 IF = 1 mA VCE = 5 V IF = 20 mA IC = 1 mA 0.08 ICEO - COLLECTOR DARK CURRENT - nA 10000 VCE = 20 V 1000 100 0.06 100 0.04 50 0.02 10 0 20 40 60 80 100 0 20 40 60 80 100 1 20 40 60 80 100 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C Figure 7. Relative current transfer ratio vs. ambient temperature. Figure 8. Collector-emitter saturation voltage vs. ambient temperature. Figure 9. Collector dark current vs. ambient temperature. 4 100 50 RESPONSE TIME - s VCE = 2 V IC = 2 mA TA = 25C tf td ts VOLTAGE GAIN AV - dB tr 20 10 5 2 1 0.5 0.2 0.1 0 VCE = 2 V IC = 2 mA TA = 25C RL = 10 k -10 RL = 1 k RL = 100 0.1 0.2 0.5 1 2 5 10 -20 0.2 0.5 1 2 5 10 100 1000 RL - LOAD RESISTANCE - k f - FREQUENCY - kHz Figure 10. Response time vs. load resistance. Figure 11. Frequency response. VCC INPUT Figure 12. Test circuit for response time. ;; RD RL INPUT OUTPUT OUTPUT 10% 90% td tr ts tf ; ;; RD VCC RL OUTPUT Figure 13. Test circuit for frequency response. 5 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6756 2394 India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only) Korea: (+65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0313EN November 3, 2004 5989-1739EN |
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